Studying the applicability of amorphous metal alloys as interface material for power electronics packaging

All-atom Molecular Dynamics simulations were used to study the coefficient of thermal expansion (CTE) in Cu/Zr amorphous alloys with various compositions. We explored possibility using these as bonding interface material between ceramics chips and copper leads power electronics microelectronic packaging applications an objective reducing CTE mismatch at interface. It was expected that appropriate design reduced interface, layer could withstand larger loads significantly extend device life compared devices currently implement directly bonded (DBC) approach. The non-monotonic increase content alloy analyzed explained new tessellation algorithm is focused on configuration close contacts neighboring atoms. modeling Turner equation shows “leveling” dependence mid-composition range due contribution from non-tetrahedral polyhedra would be for any binary glass system. Contrary that, “dip” Cu-rich compositions caused by nature metallic alloy, specific Cu-Zr glass.